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Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Identifieur interne : 004B81 ( Main/Repository ); précédent : 004B80; suivant : 004B82

Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Auteurs : RBID : Pascal:09-0356884

Descripteurs français

Pascal (Inist)
- Etat excité, Laser point quantique, Laser semiconducteur, Etude théorique, Méthode numérique, Dépendance température, Etat fondamental, Point quantique, Composé binaire, Indium Arséniure, Semiconducteur III-V, Indium Phosphure, Matériau optique, Gallium Arséniure, Matériau laser, InAs, InAs/GaAs, GaAs, As In, In P, As Ga, InP, Longueur cavité, 4255P, 4270H, Equation bilan transfert énergie.

English descriptors

KwdEn :
- Binary compounds, Excited states, Gallium Arsenides, Ground states, III-V semiconductors, Indium Arsenides, Indium Phosphides, Laser materials, Numerical method, Optical materials, Quantum dot lasers, Quantum dots, Rate equation, Semiconductor lasers, Temperature dependence, Theoretical study.

Abstract

In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs-InP(113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model is based on a multipopulation rate equations analysis. Calculations take into account the QD size dispersion as well as the temperature dependence through both the inhomogeneous and the homogeneous broadenings. This paper demonstrates that the model is capable of reproducing the spectral behavior of InAs-InP QD lasers. Especially, this study aims to highlight the transition of the lasing wavelength from the ground state (GS) to the excited state (ES). In order to understand how the QD laser turns on, calculated optical spectra are determined for different cavity lengths and compared to experimental ones. Unlike InAs-GaAs QD lasers emitting at 1.3 μm, it is shown that a continuous transition from the GS to the ES is exhibited because of the large inhomogeneous broadening comparable to the GS and ES lasing energy difference.

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Le document en format XML

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<term>Excited states</term>
<term>Gallium Arsenides</term>
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<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Laser materials</term>
<term>Numerical method</term>
<term>Optical materials</term>
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<term>Quantum dots</term>
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<term>Laser point quantique</term>
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<term>Dépendance température</term>
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<term>Point quantique</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Semiconducteur III-V</term>
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<front><div type="abstract" xml:lang="en">In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs-InP(113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model is based on a multipopulation rate equations analysis. Calculations take into account the QD size dispersion as well as the temperature dependence through both the inhomogeneous and the homogeneous broadenings. This paper demonstrates that the model is capable of reproducing the spectral behavior of InAs-InP QD lasers. Especially, this study aims to highlight the transition of the lasing wavelength from the ground state (GS) to the excited state (ES). In order to understand how the QD laser turns on, calculated optical spectra are determined for different cavity lengths and compared to experimental ones. Unlike InAs-GaAs QD lasers emitting at 1.3 μm, it is shown that a continuous transition from the GS to the ES is exhibited because of the large inhomogeneous broadening comparable to the GS and ES lasing energy difference.</div>
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<fC01 i1="01" l="ENG"><s0>In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs-InP(113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model is based on a multipopulation rate equations analysis. Calculations take into account the QD size dispersion as well as the temperature dependence through both the inhomogeneous and the homogeneous broadenings. This paper demonstrates that the model is capable of reproducing the spectral behavior of InAs-InP QD lasers. Especially, this study aims to highlight the transition of the lasing wavelength from the ground state (GS) to the excited state (ES). In order to understand how the QD laser turns on, calculated optical spectra are determined for different cavity lengths and compared to experimental ones. Unlike InAs-GaAs QD lasers emitting at 1.3 μm, it is shown that a continuous transition from the GS to the ES is exhibited because of the large inhomogeneous broadening comparable to the GS and ES lasing energy difference.</s0>
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<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
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<s5>03</s5>
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<s5>53</s5>
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<s5>54</s5>
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<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
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<s5>57</s5>
</fC03>
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<s5>57</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<s4>INC</s4>
<s5>73</s5>
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<s4>INC</s4>
<s5>75</s5>
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<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
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<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Longueur cavité</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
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<s4>INC</s4>
<s5>92</s5>
</fC03>
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<s4>CD</s4>
<s5>96</s5>
</fC03>
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<s4>CD</s4>
<s5>96</s5>
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</fN21>
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Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

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